Glass substrates offer high structural integrity, resistance to vibration and temperature, environmental ruggedness, and low electrical loss, making them ideal for next generation microelectronics demands. Samtec’s proprietary Glass Core Technology process leverages the performance benefits of glass to enable performance optimized, ultra-miniaturized substrates for next generation designs.
Automotive MEMS and Sensors
Smart Building Sensor Modules
Medical Robotics Sensors
RF Component and Modules
Advanced RF SiP
Automotive RF
CMOS Image Sensor (CIS)
Automotive Camera Modules
Active Images & LiDAR
Solid State Medical Images
Glass Core Technology Design Rules & Guidelines
NOTE:
These dimensions are guidelines designed to help release product to manufacturing as quickly as possible. Full capabilities are not limited to the specifications listed below. Please contact SME@samtec.com for applications with tighter requirements.
Through-Glass VIA (TGV) Enabled Glass Interposers
Samtec’s Through-Glass Vias (TGVs) enable Glass Core Technology (i.e., glass interposers, smart glass substrates and microstructured glass substrates). TGV-enabled glass substrates permit the integration of glass and metal into a single wafer, while interposers promote more efficient package interconnects and manufacturing cycle times.
The hermetically sealed TGVs are manufactured from both high quality borosilicate glass, fused silica (aka quartz), and sapphire. Through the use of high quality glass wafer material, combined with advanced interconnect technologies (e.g., Redistribution Layer), Samtec’s Glass Core Technology enables a one-of-a-kind packaging product.
Through-Glass Via Cross-Section View
Glass Characteristics & Applications
Borosilicate Glass
Excellent clarity & rigidity
High thermal shock resistance
CTE matched to Silicon
Applications include:
Biomedical
2.5D / 3D Packaging
Displays
Optoelectronics
Fused Silica
High purity material
Low dielectric constant & loss factor
Very low thermal expansion
Wide operating temp range
Applications include:
Biomedical
RF MEMS
Optics, Imaging & Photonics
Borosilicate Glass & Fused Silica
Detail
Units
A
Nominal Glass Thickness
260 μm
B
Via Diameter (min)
40 μm
Via Tapering
5 deg
C
Via Pitch
2 x Via Diameter
Total Thickness Variation (TTV)
15 μm
Via Positional Accuracy
+/-5 μm
Redistribution Layer (RDL) Technology
Samtec's Redistribution Layer (RDL) technology enables circuit formation on glass substrates for interfacing to TGVs via a unique thin-film approach. This provides for low loss fan-out of chip and package interconnects, and lower costs compared to traditional Silicon-based interposers.
Glass Core Technology Capabilities
Specifications
Current
Roadmap
No. of Metal Layers per Side
2
4
A
Glass Core Thickness
260 µm
100-450 µm
Via Diameter
40 µm
10 µm
Annular Ring (Catch Pad)
20 µm larger than Via Diameter
Via Pitch (min)
2x Diameter
40 µm
D, E
Line/Spacing (min)
15 µm / 15 µm
10 µm / 10 µm
F
Copper Thickness
1-5 µm
G
Dielectric Thickness 1 & 2 (min)
4 µm
Solder Ball Types
SN63Pb37 and SAC305
Pb95Sn5, Pb90Sn10, Cu/Sn Pillars
Under Bump Metallization (UBM)
ENIG
ENIPIG
Top View Of Circuit For Top/Bottom RDL
Cross-Section - 2 Metal Layers (Current Capability)
Cross-Section - 4 Metal Layers (Future Capability)
Visit samtec.com/microelectronics to learn more about Samtec's Glass Core Technology and Advanced IC Packaging Capabilities. Contact SME@samtec.com to speak with our specialists about your next generation microelectronics needs.